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| TCST1210 Vishay Telefunken Transmissive Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a phototransistor. Applications D Contactless optoelectronic switch, control and counter 95 10541 Features D Compact construction D No setting efforts D Polycarbonate case protected against ambient light 15118 D Current Transfer Ratio (CTR) of typical 10% 10.0 Top view Order Instruction Ordering Code TCST1210 Resolution (mm) / Aperture (mm) 0.4 / 0.5 Remarks Document Number 83769 Rev. A1, 08-Jun-99 www.vishay.com 1 (6) TCST1210 Vishay Telefunken Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Value 5 50 1 100 100 Unit V mA A mW C tp 10 ms Tamb 25C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions Symbol VCEO VECO IC ICM PV Tj Value 30 5 30 100 100 100 Unit V V mA mA mW C tp/T = 0.5, tp 10 ms Tamb 25C Coupler Parameter Total power dissipation Operating temperature range Storage temperature range Soldering temperature Test Conditions Tamb 25C Symbol Ptot Tamb Tstg Tsd Value 200 -20 to +85 -30 to +100 260 Unit mW C C C 2 mm from case, t 5 s Electrical Characteristics (Tamb = 25C) Input (Emitter) Parameter Forward voltage Reverse voltage Junction capacitance Test Conditions IF = 20 mA IR = 10 mA VR = 0, f = 1 MHz Symbol VF VR Cj Min. 5 50 Typ. 1.25 Max. 1.6 Unit V V pF Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector dark current Test Conditions IC = 1 mA IE = 10 mA VCE = 10 V, IF = 0, E = 0 Symbol VCEO VECO ICEO Min. 30 5 Typ. Max. Unit V V nA 100 Coupler Parameter Current transfer ratio Collector current Test Conditions VCE = 5 V, IF = 20 mA VCE = 5 V, IF = 20 mA Symbol CTR IC Min. 2.5 0.5 Typ. 10 2 Max. Unit % mA www.vishay.com 2 (6) Document Number 83769 Rev. A1, 08-Jun-99 TCST1210 Vishay Telefunken Switching Characteristics Parameter Rise time Fall time Test Conditions VS = 5 V, IC = 100 m RL = 1 kW (see figure 1) mA, Symbol tr tf Typ. 20.0 20.0 Unit ms ms 0 IF RG = 50 W tp = 0.01 T tp = 50 ms IF IC = 100 mA Adjusted throug input amplitude +5V 96 11698 IF 0 tp IC t Channel I Channel II 50 W 1 kW Oscilloscope RL > 1 MW CL < 20 pF 15119 100% 90% Figure 1. Test circuit 10% 0 tr td ton tp td tr ton (= td + tr) pulse duration delay time rise time turn-on time ts toff ts tf toff (= ts + tf) tf t storage time fall time turn-off time Figure 2. Switching times Document Number 83769 Rev. A1, 08-Jun-99 www.vishay.com 3 (6) TCST1210 Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified) 100 I C - Collector Current ( mA ) I F - Forward Current ( mA ) 10 VCE = 5V 1 10 0.1 1 0.01 0.1 0 16097 0.001 0.4 0.8 1.2 1.6 2.0 16100 0.1 1 10 100 VF - Forward Voltage ( V ) IF - Forward Current ( mA ) Figure 3. Forward Current vs. Forward Voltage CTR rel - Relative Current Transfer Ratio 1.2 Figure 6. Collector Current vs. Forward Current 10 IC - Collector Current ( mA ) IF=50mA 1 20mA 10mA 5mA 0.1 2mA 1mA 0.01 1.0 0.8 0.6 VCE=10V IF=10mA 0.4 -25 0 25 50 75 100 0.1 16101 1 10 100 16098 Tamb - Ambient Temperature ( C ) VCE - Collector Emitter Voltage ( V ) Figure 4. Relative Current Transfer Ratio vs. Ambient Temperature 1000 Figure 7. Collector Current vs. Collector Emitter Voltage 100 VCE=10V IF=0 CTR - Current Transfer Ratio ( % ) I CEO- Collector Dark Current, with open Base ( A ) 100 10 10 1 VCE=5V 0.1 0.1 1 10 100 1 0 16099 25 50 75 100 16102 Tamb - Ambient Temperature ( C ) IF - Forward Current ( mA ) Figure 5. Collector Dark Current vs. Ambient Temperature Figure 8. Current Transfer Ratio vs. Forward Current www.vishay.com 4 (6) Document Number 83769 Rev. A1, 08-Jun-99 TCST1210 Vishay Telefunken Dimensions of TCST1210 in mm 15121 Document Number 83769 Rev. A1, 08-Jun-99 www.vishay.com 5 (6) TCST1210 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.com 6 (6) Document Number 83769 Rev. A1, 08-Jun-99 |
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